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Volumn 3, Issue 7, 2006, Pages 399-410

Wafer-level stress in combination with process induced stress for optimum performance enhancement

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MOS DEVICES; SILICON WAFERS; STRAIN MEASUREMENT;

EID: 33846960203     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355837     Document Type: Conference Paper
Times cited : (12)

References (17)
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    • Ito, S.1
  • 2
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    • C.H. Chen et al., Stress Memorization Technique by Selective Strained-Nitride Capping for sub-65nm High Performance Strained-Si Device Application, VLSI 04 pp 56-57.
    • C.H. Chen et al., Stress Memorization Technique by Selective Strained-Nitride Capping for sub-65nm High Performance Strained-Si Device Application, VLSI 04 pp 56-57.
  • 3
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    • A logic Nanotechnology Featuring Starined-Silicon
    • April
    • S. Thompson et al, A logic Nanotechnology Featuring Starined-Silicon. IEEE Electron Device Letters, Vol 25, No4, April 2004, pp191-193
    • (2004) IEEE Electron Device Letters , vol.25 , Issue.NO4 , pp. 191-193
    • Thompson, S.1
  • 4
    • 33847287986 scopus 로고    scopus 로고
    • Integration and optimization of embedded SiGe, compressive and tensile stresssed liners film, an dstress memorization effect in advanced SOI CMOS technologies
    • M. Horstmann et al. Integration and optimization of embedded SiGe, compressive and tensile stresssed liners film, an dstress memorization effect in advanced SOI CMOS technologies. IEDM 2005, pp 243-246
    • (2005) IEDM , pp. 243-246
    • Horstmann, M.1
  • 5
    • 41149168757 scopus 로고    scopus 로고
    • Balancing SoC Design and Technology Challenges
    • at
    • J. Stork et al, Balancing SoC Design and Technology Challenges at 45nm. Proceedings VLSI 2006.
    • (2006) Proceedings VLSI
    • Stork, J.1
  • 6
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    • F. Andrieu et al, 25 nm Short and Narrow Strained FDSOI with TiN/HfO2 Gate Stack, Proceedings of VLSI 06.
    • F. Andrieu et al, 25 nm Short and Narrow Strained FDSOI with TiN/HfO2 Gate Stack, Proceedings of VLSI 06.
  • 7
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    • N. Collaert et al. Performance enhancement of MUGFET devices using Super Critical Strained-SOI and CESL, Proceedings of VLSI 06.
    • N. Collaert et al. Performance enhancement of MUGFET devices using Super Critical Strained-SOI and CESL, Proceedings of VLSI 06.
  • 8
    • 33846976843 scopus 로고    scopus 로고
    • A. Thean et al, Strain-Enhanced CMOS Through Novel Process Substrate Stress Hybridization of Super Critically Thick Strained Directly on Insulator (SC-sSOI), Proceeding of VLSI 06.
    • A. Thean et al, Strain-Enhanced CMOS Through Novel Process Substrate Stress Hybridization of Super Critically Thick Strained Directly on Insulator (SC-sSOI), Proceeding of VLSI 06.
  • 9
    • 33846998458 scopus 로고    scopus 로고
    • A. Thean et al, Uniaxial Biaxial Stress hybridization For Super-Critical Strained-Si Directly on Insulator PMOS with different Channel Orientations. IEDM 05
    • A. Thean et al, Uniaxial Biaxial Stress hybridization For Super-Critical Strained-Si Directly on Insulator PMOS with different Channel Orientations. IEDM 05
  • 10
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    • Intergation of Local Stress Techniques with Strained-Si Directly on Insulator Substrates
    • H.Yin et al, Intergation of Local Stress Techniques with Strained-Si Directly on Insulator Substrates, VLSI 2006 p 94-96
    • (2006) VLSI , pp. 94-96
    • Yin, H.1
  • 12
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    • I. Cayrefourcq et al. Mobility enhancement through substrate engineering, ECS 05
    • I. Cayrefourcq et al. Mobility enhancement through substrate engineering, ECS 05
  • 13
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    • Q.-H. Xie et al, MRS Symp. E on Semiconductor Defect Engineering, E4.31, March (2005).
    • Q.-H. Xie et al, MRS Symp. E on Semiconductor Defect Engineering, E4.31, March (2005).
  • 16
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    • High Electron Mobility and Hole mobility Enhancement in Thin Body Strained Si/Strained SiGe/Si Heterostructures on Insulator
    • I. Aberg et al. High Electron Mobility and Hole mobility Enhancement in Thin Body Strained Si/Strained SiGe/Si Heterostructures on Insulator. IEDM 2004, pp 173-176.
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  • 17
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    • Co-Integrated Dual Strained Channel on fully depleted sSOI CMOSFET with HfD2/TiN gate stack down to 15nm gate Length
    • F. Andrieu et al. Co-Integrated Dual Strained Channel on fully depleted sSOI CMOSFET with HfD2/TiN gate stack down to 15nm gate Length. IEEE SOI Conference 2005
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    • Andrieu, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.