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Volumn 5, Issue 10, 2010, Pages 1692-1697

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

(8) Zhang, X a,b Dubrovskii, V G b,c Sibirev, N V b Cirlin, G E b,c,d Sartel, C d Tchernycheva, M d Harmand, J C d Glas, F d

a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS (China)

b ST PETERSBURG ACADEMIC UNIVERSITY (Russian Federation)

c IOFFE INSTITUTE (Russian Federation)

d UNIV PARIS SUD (France)

Author keywords

Inclined GaAs nanowires; Molecular beam epitaxy; Surface diffusion

Indexed keywords

DIFFUSION LENGTH; EFFECTIVE DIFFUSION LENGTH; GAAS; GAAS NANOWIRES; GROWTH MODELS; MBE GROWTH; ROTATING SUBSTRATES; TILT ANGLE;

ADATOMS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; EXPERIMENTS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING GALLIUM; SUPERSATURATION; SURFACE DIFFUSION;

GALLIUM ALLOYS;

EID: 77958502167 PISSN: 19317573 EISSN: 1556276X Source Type: Journal
DOI: 10.1007/s11671-010-9698-7 Document Type: Article

Times cited : (25)

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