InGaAs quantum well grown on high-index surfaces for superluminescent diode applications

Nanoscale Research Letters

Volumn 5, Issue 6, 2010, Pages 1079-1084

  Li, Zhenhua ^a   Wu, Jiang ^b   Wang, Zhiming M ^a   Fan, Dongsheng ^b   Guo, Aqiang ^a   Li, Shibing ^b   Yu, Shui Qing ^b   Manasreh, Omar ^a,b   Salamo, Gregory J ^a,b  

^a UNIVERSITY OF ARKANSAS   (United States)

^b 3202 Bell Engineering Center   (United States)

Author keywords

Atomic force microscopy; High index surfaces; Photoluminescence; Quantum well; Superluminescent diode

Indexed keywords

GAAS SUBSTRATES; GAAS(1 0 0); HIGH INDEX SURFACE; HIGH-INDEX; HIGH-INDEX SURFACES; INGAAS QUANTUM WELLS; PHOTOLUMINESCENCE EMISSION; PHOTOLUMINESCENCE SPECTRUM; QUANTUM WELL; ROOM TEMPERATURE; SUPERLUMINESCENT DIODE; VARIOUS SUBSTRATES;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; ELECTRON ENERGY LEVELS; FULL WIDTH AT HALF MAXIMUM; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77953026480     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9605-2     Document Type: Article

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