SCOPUS 정보 검색 플랫폼

Volumn 13, Issue 12, 2010, Pages

Schottky barrier characteristics and carrier transport mechanism for ohmic contacts to strained p-Type InGaN/GaN superlattice

(2) Jang, Sun Ho a Jang, Ja Soon a

a Yeungnam University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONDUCTION; COMPENSATION EFFECTS; CONTACT PROPERTIES; INGAN/GAN; METAL WORK FUNCTION; P-TYPE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SPECIFIC CONTACT RESISTANCES; TRANSPORT MECHANISM;

ELECTRIC CONTACTORS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SUPERLATTICES;

WORK FUNCTION;

EID: 77958484015 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3486447 Document Type: Article

Times cited : (10)

References (18)

1
- 0005985130
- JAPIAU 0021-8979,. 10.1063/1.371145
- S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. JAPIAU 0021-8979, 86, 1 (1999). 10.1063/1.371145
- (1999) J. Appl. Phys. , vol.86 , pp. 1
- Pearton, S.J.¹ Zolper, J.C.² Shul, R.J.³ Ren, F.⁴

2
- 0001285929
- APPLAB 0003-6951,. 10.1063/1.117237
- T. Mori, T. Kozawa, T. Ohwaki, Y. Taga, S. Nagai, S. Yamasaki, S. Asami, N. Shibata, and M. Koite, Appl. Phys. Lett. APPLAB 0003-6951, 69, 3537 (1996). 10.1063/1.117237
- (1996) Appl. Phys. Lett. , vol.69 , pp. 3537
- Mori, T.¹ Kozawa, T.² Ohwaki, T.³ Taga, Y.⁴ Nagai, S.⁵ Yamasaki, S.⁶ Asami, S.⁷ Shibata, N.⁸ Koite, M.⁹

3
- 0000537361
- Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN
- DOI 10.1063/1.123954, PII S0003695199031010
- J.-S. Jang, I.-S. Chang, H.-K. Kim, T.-Y. Seong, S. H. Lee, and S.-J. Park, Appl. Phys. Lett. APPLAB 0003-6951, 74, 70 (1999). 10.1063/1.123954 (Pubitemid 129709968)
- (1999) Applied Physics Letters , vol.74 , Issue.1 , pp. 70-72
- Jang, J.-S.¹ Chang, I.-S.² Kim, H.-K.³ Seong, T.-Y.⁴ Lee, S.⁵ Park, S.-J.⁶

4
- 0040708810
- JVTBD9 1071-1023,. 10.1116/1.591045
- J.-S. Jang, S.-J. Park, and T.-Y. Seong, J. Vac. Sci. Technol. B JVTBD9 1071-1023, 17, 2667 (1999). 10.1116/1.591045
- (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 2667
- Jang, J.-S.¹ Park, S.-J.² Seong, T.-Y.³

5
- 0001387374
- Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
- DOI 10.1063/1.122641, PII S0003695198012467
- J. K. Kim, J. L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. I. Kim, Appl. Phys. Lett. APPLAB 0003-6951, 73, 2953 (1998). 10.1063/1.122641 (Pubitemid 128674197)
- (1998) Applied Physics Letters , vol.73 , Issue.20 , pp. 2953-2955
- Kim, J.K.¹ Lee, J.-L.² Lee, J.W.³ Eoi Shin, H.⁴ Jo Park, Y.⁵ Kim, T.⁶

6
- 0000537364
- APPLAB 0003-6951,. 10.1063/1.123546
- J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, C. Y. Chen, and K. K. Shih, Appl. Phys. Lett. APPLAB 0003-6951, 74, 1275 (1999). 10.1063/1.123546
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1275
- Ho, J.K.¹ Jong, C.S.² Chiu, C.C.³ Huang, C.N.⁴ Chen, C.Y.⁵ Shih, K.K.⁶

7
- 0001597513
- APPLAB 0003-6951,. 10.1063/1.126457
- Y.-L. Li, E. F. Schubert, J. W. Graff, A. Osinsky, and W. F. Schaff, Appl. Phys. Lett. APPLAB 0003-6951, 76, 2728 (2000). 10.1063/1.126457
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2728
- Li, Y.-L.¹ Schubert, E.F.² Graff, J.W.³ Osinsky, A.⁴ Schaff, W.F.⁵

8
- 0035886085
- APPLAB 0003-6951,. 10.1063/1.1410336
- K. Kumakura, T. Makimoto, and N. Kobayashi, Appl. Phys. Lett. APPLAB 0003-6951, 79, 2588 (2001). 10.1063/1.1410336
- (2001) Appl. Phys. Lett. , vol.79 , pp. 2588
- Kumakura, K.¹ Makimoto, T.² Kobayashi, N.³

9
- 79955990242
- 1-xN capping layers
- DOI 10.1063/1.1445807
- T. Gessmann, Y.-L. Li, E. L. Waldron, J. W. Graff, E. F. Schubert, and J. K. Sheu, Appl. Phys. Lett. APPLAB 0003-6951, 80, 986 (2002). 10.1063/1.1445807 (Pubitemid 34168035)
- (2002) Applied Physics Letters , vol.80 , Issue.6 , pp. 986
- Gessmann, T.¹ Li, Y.-L.² Waldron, E.L.³ Graff, J.W.⁴ Schubert, E.F.⁵ Sheu, J.K.⁶

10
- 33645673643
- SSTEET 0268-1242,. 10.1088/0268-1242/21/5/L01
- J.-S. Jang, S.-J. Sohn, D. Kim, and T.-Y. Seong, Semicond. Sci. Technol. SSTEET 0268-1242, 21, L37 (2006). 10.1088/0268-1242/21/5/L01
- (2006) Semicond. Sci. Technol. , vol.21 , pp. 37
- Jang, J.-S.¹ Sohn, S.-J.² Kim, D.³ Seong, T.-Y.⁴

11
- 33846266978
- Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p- In0.15 Ga0.85 Np-GaN layer
- DOI 10.1063/1.2424320
- J.-S. Jang and T.-Y. Seong, J. Appl. Phys. JAPIAU 0021-8979, 101, 013711 (2007). 10.1063/1.2424320 (Pubitemid 46120643)
- (2007) Journal of Applied Physics , vol.101 , Issue.1 , pp. 013711
- Jang, J.-S.¹ Seong, T.-Y.²

12
- 67650711664
- JAPIAU 0021-8979,. 10.1063/1.3155798
- J. Wu, J. Appl. Phys. JAPIAU 0021-8979, 106, 011101 (2009). 10.1063/1.3155798
- (2009) J. Appl. Phys. , vol.106 , pp. 011101
- Wu, J.¹

13
- 21544447814
- APPLAB 0003-6951,. 10.1063/1.97145
- E. F. Schubert, J. E. Cunningham, W. T. Tsang, and T. H. Chiu, Appl. Phys. Lett. APPLAB 0003-6951, 49, 292 (1986). 10.1063/1.97145
- (1986) Appl. Phys. Lett. , vol.49 , pp. 292
- Schubert, E.F.¹ Cunningham, J.E.² Tsang, W.T.³ Chiu, T.H.⁴

14
- 0020089025
- SSELA5 0038-1101,. 10.1016/0038-1101(82)90036-3
- G. S. Marlow and M. B. Das, Solid-State Electron. SSELA5 0038-1101, 25, 91 (1982). 10.1016/0038-1101(82)90036-3
- (1982) Solid-State Electron. , vol.25 , pp. 91
- Marlow, G.S.¹ Das, M.B.²

15
- 34548396318
- Formation mechanisms of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped Al0.15 Ga0.85 N
- DOI 10.1063/1.2778452
- J.-S. Jang and T.-Y. Seong, Appl. Phys. Lett. APPLAB 0003-6951, 91, 092129 (2007). 10.1063/1.2778452 (Pubitemid 47352314)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 092129
- Jang, J.-S.¹ Seong, T.-Y.² Jeon, S.-R.³

16
- 0000739151
- APPLAB 0003-6951,. 10.1063/1.126462
- J.-S. Jang and T.-Y. Seong, Appl. Phys. Lett. APPLAB 0003-6951, 76, 2743 (2000). 10.1063/1.126462
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2743
- Jang, J.-S.¹ Seong, T.-Y.²

17
- 0038686365
- JAPNDE 0021-4922,. 10.1143/JJAP.42.2254
- K. Kumakura, T. Makimoto, and N. Kobayahi, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922, 42, 2254 (2003). 10.1143/JJAP.42.2254
- (2003) Jpn. J. Appl. Phys., Part 1 , vol.42 , pp. 2254
- Kumakura, K.¹ Makimoto, T.² Kobayahi, N.³

18
- 0004065549
- North-Holland Physics, Amsterdam
- F. R. de Boer, R. Boom, W. C. M. Mattens, A. R. Miedema, and A. K. Niessen, Cohesion in Metals: Transition Metal Alloys, North-Holland Physics, Amsterdam (1988).
- (1988) Cohesion in Metals: Transition Metal Alloys
- De Boer, F.R.¹ Boom, R.² Mattens, W.C.M.³ Miedema, A.R.⁴ Niessen, A.K.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.