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Volumn 13, Issue 12, 2010, Pages

Improved resistive switching properties of solution processed ti O 2 thin films

(7) Biju, Kuyyadi P a Liu, Xinjun a Bourim, El Mostafa a Kim, Insung a Jung, Seungjae a Park, Jubong a Hwang, Hyunsang a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; COMPLIANCE CURRENT; CYCLING ENDURANCE; HIGH-RESISTANCE STATE; LOW TEMPERATURES; LOW-RESISTANCE STATE; ON/OFF RATIO; OXYGEN VACANCY DEFECTS; PHYSICAL MODEL; RELIABILITY AND STABILITY; RESISTIVE SWITCHING; SET OPERATION; SWITCHING PROPERTIES;

OXYGEN; OXYGEN VACANCIES; PLATINUM; SWITCHING SYSTEMS; THIN FILMS; VACANCIES;

SWITCHING;

EID: 77958466528 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3494433 Document Type: Article

Times cited : (9)

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