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Japanese Journal of Applied Physics

Volumn 49, Issue 8 PART 2, 2010, Pages

Etching magnetic tunnel junction with metal etchers

(5) Kinoshita, Keizo a Utsumi, Hiroaki a Suemitsu, Katsumi a Hada, Hiromitsu a Sugibayashi, Tadahiko a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

300 MM WAFERS; CARBON LAYERS; COUPLED PLASMA; END POINT DETECTION; ETCH PROCESS; ETCH UNIFORMITY; ETCHED SURFACE; GAS SYSTEMS; ION ENERGIES; ION MILLING; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTIVE; MATERIAL DEGRADATION; MR RATIO; PATTERN DEFORMATION; PROTECTION EFFECT; REDEPOSITION;

ARGON; DEGRADATION; IONS; MAGNETIC PROPERTIES; METHANOL; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 77958107764 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.08JB02 Document Type: Article

Times cited : (52)

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