SIMS characterization of hydrogen transport through SiO 2 by low-temperature hydrogen annealing

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 804-808

  Kawashima, Yoshiya ^a,b   Liu, Ziyuan ^a   Terashima, Koichi ^a   Hamada, Koji ^c   Fukutani, Katsuyuki ^d   Wilde, Markus ^d   Aoyagi, Satoka ^b   Kudo, Masahiro ^b  

^a NEC CORPORATION   (Japan)

^b SEIKEI UNIVERSITY   (Japan)

^c Elpida Memory Inc   (Japan)

^d INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Interface trap; Low temperature hydrogen annealing; NRA, TDS; Silicon oxide; SIMS

Indexed keywords

ANNEALING; DESORPTION; ELECTRON BEAMS; HYDROGEN; INTERFACES (MATERIALS); ION BEAMS; OPTIMIZATION; SECONDARY ION MASS SPECTROMETRY;

BOND DENSITY;

SILICA;

EID: 0038548385     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00107-7     Document Type: Conference Paper

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