Design and analysis for a 60-GHz low-noise amplifier with RF ESD protection

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 1, 2009, Pages 298-305

  Huang, Bo Jr ^a   Wang, Chi Hsueh ^a   Chen, Chung Chun ^a   Lei, Ming Fong ^a   Huang, Pin Cheng ^a   Lin, Kun You ^a   Wang, Huei ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

CMOS integrated circuits (ICs); Low noise amplifiers (LNAs); Millimeter wave (MMW) circuits; RF electrostatic discharge (ESD) protection

Indexed keywords

CMOS LNA; CMOS TECHNOLOGY; CORE CIRCUIT; DC POWER; DESIGN AND ANALYSIS; ELECTROSTATIC DISCHARGE PROTECTION; ESD PROTECTION; HUMAN BODY MODELS; MEASURED RESULTS; MILLIMETER-WAVE (MMW) CIRCUITS; MIXED SIGNAL; OPERATION FREQUENCY; RF ELECTROSTATIC DISCHARGE (ESD) PROTECTION; RF PERFORMANCE; SMALL SIGNAL GAIN; VOLTAGE LEVELS;

CMOS INTEGRATED CIRCUITS; DC POWER TRANSMISSION; ELECTROSTATIC DISCHARGE; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; LUMPED PARAMETER NETWORKS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES;

ELECTROSTATIC DEVICES;

EID: 77958095626     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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