A full-monolithic LNA in 0.18μm SiGe: Performance variation due to ESD protection

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 2, Issue , 2004, Pages 1226-1229

  Feng, Haigang ^a   Xie, Haolu ^a   Wang, Albert ^a   Cheng, Yuhua ^b   Lloyd, Stephen ^b  

^a ILLINOIS INSTITUTE OF TECHNOLOGY   (United States)

^b SKYWORKS SOLUTIONS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FREQUENCIES; GAIN MEASUREMENT; MATHEMATICAL MODELS; MICROPROCESSOR CHIPS; NETWORKS (CIRCUITS); SPURIOUS SIGNAL NOISE; TRANSCEIVERS;

COUPLING EFFECTS; FREQUENCY BAND; RECEIVER SYSTEMS; SIGNAL SENSITIVITY;

SEMICONDUCTING SILICON;

EID: 21644446597     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. A.O Adan, et. al, IEEE International SOI Conference, p.9-12, 1998.
3. H. Feng, et. al, IEEE MTT-S International Microwave Symposium Digest, Vol 1, p.553-556, 2002.
4. B. Razavi, "RF Microelectronics", Prentice Hall, 1998.
5. K. Gong, H. Feng, and A. Wang, IEEE Transactions on Microwave Theory and Techniques, Vol 50, p.393-402, 2002.