A compact, ESD-protected, SiGe BiCMOS LNA for ultra-wideband applications

IEEE Journal of Solid-State Circuits

Volumn 42, Issue 5, 2007, Pages 1121-1130

  Bhatia, Karan ^a,b   Hyvonen, Sami ^a,b   Rosenbaum, Elyse ^a,b  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

BiCMOS analog integrated circuits; Broadband amplifiers; Circuit topology; Electrostatic discharges; Impedance matching; Noise; RL circuits

Indexed keywords

BICMOS ANALOG INTEGRATED CIRCUITS; COMMON EMITTER; CURRENT SOURCE NOISE REDUCTION;

BANDWIDTH; BICMOS TECHNOLOGY; BROADBAND AMPLIFIERS; ELECTRIC CURRENTS; ELECTRIC NETWORK TOPOLOGY; ELECTROSTATIC DISCHARGE; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPEDANCE MATCHING (ELECTRIC); SILICON; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIERS;

EID: 34247391533     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2007.894826     Document Type: Conference Paper

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