Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

Journal of Crystal Growth

Volumn 311, Issue 13, 2009, Pages 3417-3422

  Novikov, S V ^a   Staddon, C R ^a   Akimov, A V ^a   Campion, R P ^a   Zainal, N ^a   Kent, A J ^a   Foxon, C T ^a   Chen, C H ^b   Yu, K M ^c   Walukiewicz, W ^c  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; AMORPHOUS GAN; AS CONTENT; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; BAND ANTI-CROSSING MODELS; BAND GAPS; COMPOSITION DEPENDENCE; COMPOSITION RANGES; DILUTE ALLOYS; FLUX RATIO; LOW TEMPERATURE GROWTH; OPTICAL ABSORPTION MEASUREMENT; OPTICAL AND ELECTRICAL PROPERTIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SAPPHIRE SUBSTRATES; SHORT RANGE ORDERING;

AMORPHOUS ALLOYS; ARSENIC COMPOUNDS; CORUNDUM; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; ENERGY GAP; FILM GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES;

GALLIUM ALLOYS;

EID: 66649102412     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.010     Document Type: Article

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