Bismuth a new dopant for GaN films grown by molecular beam epitaxy - Surfactant effects, formation of GaN1-xBix alloys and co-doping with arsenic

Journal of Crystal Growth

Volumn 247, Issue 1-2, 2003, Pages 35-41

  Novikov, Sergei V ^a,b   Winser, A J ^a   Li, T ^a   Campion, R ^a   Harrison, I ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

BISMUTH; FILM GROWTH; GALLIUM NITRIDE; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

DOPANTS;

MOLECULAR BEAM EPITAXY;

EID: 0037210912     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01914-0     Document Type: Article

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