Post-process thermal treatment for microwave power improvement of AlGaN/GaN HEMTs

Microelectronic Engineering

Volumn 87, Issue 12, 2010, Pages 2638-2641

  Peng, M Z ^a   Zheng, Y K ^a   Wei, K ^a   Liu, X Y ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Current dispersion collapse; GaN; High electron mobility transistors; Post process rapid thermal annealing

Indexed keywords

DISPERSIONS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE;

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CURRENT DISPERSIONS; DEVICE FABRICATIONS; PASSIVATION EFFECT; POST PROCESS; POWER-ADDED EFFICIENCY; RADIO FREQUENCIES; RAPID THERMAL ANNEALING (RTA);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77958039799     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.07.039     Document Type: Article

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