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Volumn 49, Issue 8 PART 1, 2010, Pages

Effects of wafer precleaning and plasma irradiation to wafer surfaces on plasma-assisted surface-activated direct bonding

(3) Takei, Ryohei a Yoshida, Kohei a Mizumoto, Tetsuya a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT BONDING; HETEROGENEOUS MATERIALS; INP; OPTICAL ISOLATORS; OXYGEN PLASMAS; PLASMA IRRADIATIONS; PLASMA SURFACES; PRECLEANING; SILICON WAVEGUIDE; SILICON-ON-INSULATORS; SURFACE ACTIVATED BONDING; WAFER SURFACE; YTTRIUM IRON GARNETS;

CERIUM; CERIUM COMPOUNDS; GARNETS; IRRADIATION; METAL ANALYSIS; MICROWAVE ISOLATORS; OXYGEN; PLASMAS; SILICATE MINERALS; SILICON WAFERS; SURFACE PROPERTIES; SURFACE ROUGHNESS; WAVEGUIDE ISOLATORS; YTTRIUM; YTTRIUM ALLOYS; YTTRIUM COMPOUNDS;

WAFER BONDING;

EID: 77957877159 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.086204 Document Type: Article

Times cited : (22)

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