Single-mode operation of GaInAsP/InP-Membrane distributed feedback lasers bonded on silicon-on-insulator substrate with rib-waveguide structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 45-49, 2007, Pages

  Okumura, Tadashi ^a   Maruyama, Takeo ^a,b   Kanemaru, Masaki ^a   Sakamoto, Shinichi ^a   Arai, Shigehisa ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Distributed feedback laser; Membrane structure; Photonic integrated circuit; Silicon on insulator; Wafer bonding

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTROMAGNETIC WAVES; FEEDBACK; FLEXIBLE STRUCTURES; INTEGRATED CIRCUITS; INTEGRATED OPTOELECTRONICS; LASERS; LIGHT; MICROSENSORS; OPTICAL PUMPING; OPTICALLY PUMPED LASERS; PUMPING (LASER); SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; WAFER BONDING; WAVEGUIDE COMPONENTS; WAVEGUIDES;

CAVITY LENGTHS; CONTINUOUS; DISTRIBUTED FEEDBACK LASER; DISTRIBUTED FEEDBACKS; GAINASP/INP; LIGHT OUTPUTS; MEMBRANE STRUCTURE; MODE OPERATIONS; PHOTONIC INTEGRATED CIRCUIT; SILICON ON INSULATOR; SOI WAVEGUIDES; STRIPE WIDTHS; SUBMODE SUPPRESSION RATIOS; THRESHOLD PUMP POWERS; WAVE OPERATIONS; WAVEGUIDE STRUCTURES;

DISTRIBUTED FEEDBACK LASERS;

EID: 54249130780     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L1206     Document Type: Article

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