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Volumn 48, Issue 11, 2009, Pages

Relaxation of thermal stress in direct bonding by partitioning the bonding area for fabrication of optical isolator with semiconductor guiding layer

(3) Sakurai, Kazumasa a Abe, Kenji a Mizumoto, Tetsuya a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING PROCESS; COMPOUND SEMICONDUCTORS; DIRECT BONDING; ELEVATED TEMPERATURE; GAINASP; GUIDING LAYER; III-V COMPOUND SEMICONDUCTOR; OPTICAL ISOLATORS; PROPAGATION LOSS; SURFACE ACTIVATED BONDING;

GARNETS; MICROWAVE ISOLATORS; SILICATE MINERALS; THERMAL STRESS; THERMOELASTICITY; WAVEGUIDE ISOLATORS; WAVEGUIDES;

THERMAL EXPANSION;

EID: 73849095168 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.112401 Document Type: Article

Times cited : (3)

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