Atomic layer deposited (ALD) Zinc Oxide film characterization for NEMS and MEMS

Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2010

Volumn , Issue , 2010, Pages 185-189

  Kotha, R ^a,b   Elam, D ^b   Collins, G ^b   Guven, N ^b   Chabanov, A ^b   Chen, C L ^b   Ayon, A A ^a,b  

^a MEMS Research Laboratory   (United States)

^b UNIVERSITY OF TEXAS AT SAN ANTONIO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BARRIER MATERIAL; CONFORMALITY; FILM STRESS MEASUREMENTS; LOW TEMPERATURES; NANO SCALE; NUCLEATION LAYERS; SILICON SUBSTRATES; SURFACE COVERAGES; XPS; XRD MEASUREMENTS; ZNO; ZNO FILMS;

ANGLE MEASUREMENT; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; ATOMS; CONTACT ANGLE; SCANNING ELECTRON MICROSCOPY; STRESS MEASUREMENT; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 77957832589     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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