Physical characterization of ultrathin high k dielectrics

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn 2003-January, Issue , 2003, Pages 40-50

  Vandervorst, W ^a,b   Brijs, B ^a   Bender, H ^a   Conard, O T ^a   Petry, J ^a   Richard, O ^a   Van Elshocht, S ^a   Delabie, A ^a   Caymax, M ^a   De Gendt, S ^a   Cosnier, V ^a,c   Green, M ^a,c   Chen, J ^a,c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c International Sematech   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHARACTERIZATION; DEPOSITION; DIELECTRIC MATERIALS; FILM GROWTH; FILM PREPARATION; HAFNIUM OXIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICATES; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION CONDITIONS; HIGH TEMPERATURE STABILITY; HIGH-K DIELECTRIC LAYERS; LOW ENERGY ION SCATTERING; PHYSICAL CHARACTERIZATION; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SURFACE PREPARATION METHODS; TIME-OF-FLIGHT SIMS;

HIGH-K DIELECTRIC;

EID: 84973597865     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPID.2003.1200909     Document Type: Conference Paper

References (7)

1. Bogdan Govoreanu et al., 2002 Intern. Conf. on Solid State Devices and Materials.
2. S.Van Elshocht et al. : Proc. MRS 2002 Fall Meeting-2002, Boston, USA
3. H.Bender et al. : proc ALTECH-2003
4. M. L. Green,et al. J.App. Phys 92,(2002) 7168-7174
5. H.Bender et al. : Proceedings of IWGI, Tokyo, Japan, November 2001
6. T.Conard et al. Proc. of the SIMS-XIII, Japan, to be publ. in Applied Surface Science
7. W.Vandervorst et al., proc. Fall meeting MRS-2002, Boston (symp N)