Properties of atomic layer deposited Al2O3/ZnO dielectric films grown at low temperature for RF MEMS

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5715, Issue , 2005, Pages 159-166

  Herrmann, Cari F ^a,b   DelRio, Frank W ^a   George, Steven M ^a,b   Bright, Victor M ^a  

^a UCB 450   (United States)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

Atomic layer deposition; Auger electron spectroscopy; Dielectric constant; Hardness; MEMS; Nanoindentation; Young's modulus

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEPOSITION; DIELECTRIC FILMS; ELASTIC MODULI; GROWTH (MATERIALS); HARDNESS; LOW TEMPERATURE EFFECTS; MICROELECTROMECHANICAL DEVICES; PERMITTIVITY; ZINC OXIDE;

ALLOY FILMS; ATOMIC LAYER DEPOSITION (ALD); DIELECTRIC LAYER; NANOINDENTATION;

ALUMINUM COMPOUNDS;

EID: 21844464117     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.589322     Document Type: Conference Paper

References (20)

1. C. Goldsmith, J. Ehmke, A. Malczewski, B. Pillans, S. Eshelman, Z. Yao, J. Brank and M. Eberly, "Lifetime characterization of capacitive RF MEMS switches," IEEE MTT-S International Microwave Symposium Digest, 1, pp. 277-230, 2001.
2. G. M. Rebeiz, RF MEMS Theory, Design, and Technology, John Wiley and Sons, New Jersey, 2003.
3. N. D. Hoivik, J. W. Elam, R. J. Linderman, V. M. Bright, S. M. George, Y. C. Lee, "Atomic layer deposited protective coatings for micro-electromechanical systems," Sensors and Actuators A 103, pp.100-108, 2003.
4. 3 alloy films grown using atomic layer deposition techniques," J. Electrochem. Soc. 150, pp. G339-G347, 2003.
5. S. M. George, A. W. Ott, J. W. Klaus, "Surface chemistry for atomic layer growth," J. Phys. Chem. 100, pp. 13121-13131, 1996.
6. 3 atomic layer deposition," Chem. Mater. 16, pp. 639-645, 2004.
7. 3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements," Thin Solid Films 414, pp. 43-55, 2002.
8. 3films grown by atomic layer deposition on silicon and various metal substrates," Thin Solid Films 413, pp. 186-197, 2002.
9. 3atomic layer deposition adhesion layer," J. Vac. Sci. Technol. B 18, pp. 2433-2440, 2003.
10. 3 alloy films using atomic layer deposition techniques," Chem. Mater. 15, pp. 1020-1028, 2003.
11. L. E. Davis, N. C. MacDonald, P. W. Palmberg, G. E. Riach and R. E. Weber, Handbook of Auger Electron Spectroscopy, Perkin-Elmer Corporation, Minnesota, 1978.
12. th Edition, CRC Press, Florida, pg. D163, 1984.
13. MTS Systems Corporation, 14000 Technology Drive, Eden Prairie, MN 55344-2290
14. G. M. Pharr and W. C. Oliver, "Measurements of thin film mechanical properties using nanoindentation," MRS Bulletin 17, pp. 28-33, 1992.
15. M. J. Mayo, R. W. Siegel, Y. X. Liao and W. D. Nix, "Nanoindentation of Nanocrystalline ZnO," J. Mater. Res. 7, pp. 973-9, 1996.
16. J. C. Barbour, J. A. Knapp, D. M. Follstaedt, T. M. Mayer, K. G. Minor, and D. L. Linam, "The mechanical properties of alumina films formed by plasma deposition and by ion irradiation of sapphire," Nuc. Instr. and Meth. Phsy. Res. B 166-167, pp. 140-147, 2000.
17. L. P. Martin, D. Dadon, M. Rosen, D. Gershon, A. Birman, B. Levush, and Y. Carmel, "Ultrasonic and dielectric characterization of microwave-sintered and conventionally sintered zinc oxide," J. Am. Ceram. Soc. 79, pp. 2652-2658, 1996.
18. Material Development Coroporation, 21541 Nordhoff Street, B, Chatsworth, CA 91311
19. Stanford Research Systems, Inc., 1290-D Reamwood Ave., Sunnyvale, CA 94089
20. National Instruments Corporation, 11500 N Mopac Expwy, Austin, TX 78759