The application of atomic layer deposition for transparent thin film transistor

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Volumn 1, Issue , 2006, Pages 634-635

  Lim, S J ^a   Kwon, Soonju ^a   Kim, H ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Atomic layer deposition; Transparent thin film transistor; ZnO

Indexed keywords

FLAT PANEL DISPLAYS; NANOTECHNOLOGY; PULSED LASER DEPOSITION; TECHNOLOGY; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; VAPOR DEPOSITION; ZINC OXIDE;

ACTIVE CHANNELS; AND GATES; ATOMIC LAYER DEPOSITIONS; GATE INSULATORS; HIGH-K MATERIALS; LOW-TEMPERATURE DEPOSITION; TRANSPARENT MATERIALS; TRANSPARENT THIN FILM TRANSISTOR; ZNO;

ATOMIC LAYER DEPOSITION;

EID: 50249125849     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2006.4388939     Document Type: Conference Paper

References (2)

1. H. Kim, "Atomic layer deposition of metal and nitride thin films: Current research efforts and application for semiconductor device processing'" in Journal of Vacuum Science and Technology B, vol. 21, pp. 2231 -2161, November/December 2003.
2. Elvira M.C. Fortunato, Pedro M.C. Barguinha, Ana C.M.B.G. Pimentel, Alexandra M.F. Goncalves, Antonio J.S. Marques, Luis M.N. Pereira, and Rodrigo F.P. Martins, "Fully Transparent ZnO Thin-Film Transistor Produces at Room Temperature," in Advanced Materials, vol. 17, pp. 590-594 March 2005.