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Journal of Vacuum Science and Technology B

Volumn 28, Issue 5, 2010, Pages 940-945

Direct-write electron beam lithography in silicon dioxide at low energy

(4) Beaumont, Arnaud a Dubuc, Christian b Beauvais, Jacques a Drouin, Dominique a

a UNIVERSITÉ DE SHERBROOKE (Canada)

b OSEMI Canada (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONS; HYDROFLUORIC ACID; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; SILICON OXIDES;

DAMASCENE PROCESS; DEPTHS OF PENETRATION; DIRECT WRITE ELECTRON-BEAM LITHOGRAPHY; DIRECT-WRITING; ELECTRON-BEAM LITHOGRAPHY; ENERGY; ETCH RATIO; LOWER ENERGIES; MONTE CARLO'S SIMULATION; NANO-DEVICES;

SILICA;

EID: 77957743471 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3478304 Document Type: Article

Times cited : (4)

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