Electron beam nano-fabrication by inorganic resist for MIM tunnel junction

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 411-414

  Komuro, M ^a   Hiroshima, H ^a   Haraichi, S ^a   Ishii, K ^a   Wada, T ^a   Okayama, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; MICROELECTRONIC PROCESSING; MIM DEVICES; OXIDATION; PHOTORESISTS; SEMICONDUCTING SILICON; SILICA; TUNNEL JUNCTIONS;

ACCELERATING VOLTAGE; COULOMB STAIRCASE; ELECTRON BEAM EXPOSURE SYSTEM; INORGANIC RESIST;

NANOTECHNOLOGY;

EID: 0029732935     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00275-8     Document Type: Article

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