Room temperature single-electron transistor featuring gate-enhanced ON-state current

IEEE Electron Device Letters

Volumn 30, Issue 7, 2009, Pages 766-768

  Beaumont, Arnaud ^a   Dubuc, Christian ^a   Beauvais, Jacques ^a   Drouin, Dominique ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

Nanodevice; Nanotechnology; Plasma oxidation; Room temperature; Single electron transistor (SET)

Indexed keywords

ELECTRICAL CHARACTERISTIC; INDIVIDUAL CONTROL; JUNCTION CAPACITANCES; NANODEVICE; ON STATE CURRENT; OPERATING TEMPERATURE; PLASMA OXIDATION; PLASMA TREATMENT; ROOM TEMPERATURE; SINGLE ELECTRON TRANSISTORS; SINGLE-ELECTRON CIRCUITS; SINGLE-ELECTRON TRANSISTOR (SET);

CAPACITANCE MEASUREMENT; ELECTRONS; NANOSTRUCTURED MATERIALS; OXIDATION; PLASMA APPLICATIONS; PLASMAS; TITANIUM; TRANSIENTS; TRANSISTORS; WIND TUNNELS;

TUNNEL JUNCTIONS;

EID: 67650438364     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2021493     Document Type: Article

References (9)

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