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Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

Volumn , Issue , 2006, Pages 391-394

Low-energy electron-beam lithography of ZEP-520 positive resist

(6) Yang, Haifang a Fan, Lina b Jin, Aizi a Luo, Qiang a Gu, Changzhi a Cui, Zheng c

a INSTITUTE OF PHYSICS (China)

b Armed Police Army General Hospital (China)

c RUTHERFORD APPLETON LABORATORY (United Kingdom)

Author keywords

Electron beam lithography; ZEP 520 resist

Indexed keywords

ATOMS; ELECTRONS; MOLECULAR BEAM EPITAXY; MOLECULES; NEMS; PHOTOACOUSTIC EFFECT; TURBULENT FLOW;

ELECTRON ENERGIES; ELECTRON-BEAM; ENERGY RANGES; EXPOSURE DOSE; FORWARD SCATTERING; HIGH RESOLUTIONS; INTERNATIONAL CONFERENCES; LINE GRATINGS; LINE WIDTHS; LOW ENERGIES; LOW ENERGY ELECTRON (LEE); MOLECULAR SYSTEMS; PENETRATION DEPTHS; PITCH GRATING; RESIST FILMS; SILICON (111) SUBSTRATES;

ELECTRON BEAM LITHOGRAPHY;

ELECTRONS; LITHOGRAPHY; PENETRATION; RESOLUTION; SCATTERING; TURBULENT FLOW;

EID: 46149124111 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/NEMS.2006.334765 Document Type: Conference Paper

Times cited : (12)

References (5)

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