Low-energy electron-beam lithography of hydrogen silsesquioxane

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 788-791

  Yang, Haifang ^a   Jin, Aizi ^a   Luo, Qiang ^a   Gu, Changzhi ^a   Cui, Zheng ^b   Chen, Yifang ^b  

^a INSTITUTE OF PHYSICS   (China)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

Electron beam lithography; HSQ resist

Indexed keywords

CONCENTRATION (PROCESS); DIFFRACTION GRATINGS; ELECTRON BEAM LITHOGRAPHY; ELECTRON ENERGY LEVELS; ELECTRONS; THICKNESS MEASUREMENT;

ELECTRON-BEAM LITHOGRAPHY; HSQ RESIST; HYDROGEN SILSESQUIOXANE; TETRAMETHYL AMMONIUM HYDROXIDE;

HYDROGEN INORGANIC COMPOUNDS;

EID: 33646470204     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.004     Document Type: Article

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