Nanometer-scale patterning of polystyrene resists in low-voltage electron beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7773-7776

  Manako, Shoko ^a   Fujita, Jun Ichi ^a   Ochiai, Yukinori ^a   Nomura, Eiichi ^a   Matsui, Shinji ^a,b  

^a NEC CORPORATION   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Electron beam lithography; Low energy electron beam; Nanolithography; Negative resist; Polystyrene

Indexed keywords

MOLECULAR WEIGHT; NANOTECHNOLOGY; POLYSTYRENES;

CHARLESBY THEORY; NANOMETER SCALE PATTERNING; POLYSTYRENE RESISTS;

ELECTRON BEAM LITHOGRAPHY;

EID: 0031347670     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7773     Document Type: Article

References (10)

1. T. H. P. Chang, D. P. Kern, E. Kratshmer, K. Y. Lee, H. E. Luhn, M. A. McCord, S. A. Riston and Y. Vladimirsky: IBM J. Res. Develop. 32 (1988) 462.
2. S. P. Beaumont: Microelectron. Eng. 32 (1996) 283.
3. T. Sakamoto, H. Kawaura, T. Baba, J. Fujita and Y. Ochiai: J. Vac. Sci. Technol. B 15 (1997), in printing.
4. S. Manako, J. Fujita, Y. Ochiai. E. Nomura and S. Matsui: Jpn. J. Appl. Phys. 36 (1997) L724.
5. Y. Tabata, S. Tagawa and M. Washio: Mater. Microlithogr. ACS Symp. Ser. 266 (1984) 155.
6. J. Fujita, Y. Ohnishi, Y. Ochiai, E. Nomura and S. Matsui: J. Vac. Sci. Technol. B 14 (1996) 4272.
7. W. Brunger: Microelectron. Eng. 27 (1995) 135.
8. H. Y. Ku and L. C. Scala: J. Electrochem. Soc. 116 (1982) 663.
9. M. A. McCord and T. H. Newman: J. Vac. Sci. Technol. B 10 (1992) 3083.
10. C. W. Lo, M. J. Rooks, W. K. Lo, M. Isaacson and H. G. Craighead: J. Vac. Sci. Technol. B 13 (1995) 812.