Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites

Nanotechnology

Volumn 17, Issue 22, 2006, Pages 5652-5658

  Molina, S I ^a,b   Ben, T ^a   Sales, D L ^a   Pizarro, J ^c   Galindo, P L ^c   Varela, M ^b   Pennycook, S J ^b   Fuster, D ^d   Gonzalez Y ^d   Gonzalez L ^d  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c s n   (Spain)

^d INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; FINITE ELEMENT METHOD; MOLECULAR BEAM EPITAXY; NUCLEATION; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRAIN MEASUREMENT; STRESS ANALYSIS;

CHEMICAL POTENTIALS; COMPOSITIONAL DISTRIBUTION; COMPOSITIONAL MAPS; STRESS FIELDS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 33846056055     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/22/020     Document Type: Article

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