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Journal of Vacuum Science and Technology B

Volumn 28, Issue 5, 2010, Pages 978-984

Silicon on insulator nanoscale backside interconnects for atomic and molecular scale circuits

(6) Lwin, Ma Han Thu a Tun, Thet Naing b Kim, Hui Hui a Kajen, R S a Chandrasekhar, N a Joachim, C c

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b MAX PLANCK INSTITUTE FOR POLYMER RESEARCH (Germany)

c CEMES CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRIC CONNECTORS; INTEGRATED CIRCUIT INTERCONNECTS; MOLECULES; NANOTECHNOLOGY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TIMING CIRCUITS;

'CURRENT; ATOMIC SCALE; ELECTRICAL CONNECTION; MOLECULAR SCALE CIRCUITS; NANO SCALE; NANOFABRICATION TECHNIQUES; PLANAR CONFIGURATIONS; SILICON ON INSULATOR; SINGLE MOLECULE; SUPPORTING SURFACES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77957726702 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3484248 Document Type: Article

Times cited : (5)

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