메뉴 건너뛰기




Volumn 21, Issue 6, 2010, Pages

Generic nano-imprint process for fabrication of nanowire arrays

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; DEFECT-FREE ARRAYS; E-BEAM LITHOGRAPHY; GENERIC PROCESS; GOLD PARTICLE ARRAYS; INP; NANO-IMPRINT; NANOWIRE ARRAYS; ORGANIC RESIDUES; PIRANHA SOLUTIONS; UNIFORM NANOWIRES;

EID: 75249091313     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/6/065305     Document Type: Article
Times cited : (76)

References (23)
  • 1
    • 0035804248 scopus 로고    scopus 로고
    • Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    • DOI 10.1038/35051047
    • Duan X F, Huang Y, Cui Y, Wang J F and Lieber C M 2001 Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices Nature 409 66-9 (Pubitemid 32098623)
    • (2001) Nature , vol.409 , Issue.6816 , pp. 66-69
    • Duan, X.1    Huang, Y.2    Cui, Y.3    Wang, J.4    Lieber, C.M.5
  • 2
    • 33847712282 scopus 로고    scopus 로고
    • Single quantum dot nanowire LEDs
    • Minot E D, et al. 2007 Single quantum dot nanowire LEDs Nano Lett. 7 367-71
    • (2007) Nano Lett. , vol.7 , pp. 367-371
    • Minot, E.D.1
  • 3
    • 67949104900 scopus 로고    scopus 로고
    • Zinc incorporation via the vapor-liquid-solid mechanism into InP nanowires
    • Van Weert M H M, et al. 2009 Zinc incorporation via the vapor-liquid-solid mechanism into InP nanowires J. Am. Chem. Soc. 131 4578
    • (2009) J. Am. Chem. Soc. , vol.131 , pp. 4578
    • Van Weert, M.H.M.1
  • 4
    • 62649122327 scopus 로고    scopus 로고
    • Broad-band and omnidirectional antireflection coating based on semiconductor nanorods
    • Diedenhofen S L, et al. 2009 Broad-band and omnidirectional antireflection coating based on semiconductor nanorods Adv. Mater. 21 973-8
    • (2009) Adv. Mater. , vol.21 , pp. 973-978
    • Diedenhofen, S.L.1
  • 5
    • 33751122778 scopus 로고
    • Vapor-liquid-solid mechanism of single crystal growth
    • Wagner R S and Ellis W C 1964 Vapor-liquid-solid mechanism of single crystal growth Appl. Phys. Lett. 4 89-90
    • (1964) Appl. Phys. Lett. , vol.4 , pp. 89-90
    • Wagner, R.S.1    Ellis, W.C.2
  • 10
    • 7544245915 scopus 로고    scopus 로고
    • Role of surface diffusion in chemical beam epitaxy of InAs nanowires
    • Jensen L E, et al. 2004 Role of surface diffusion in chemical beam epitaxy of InAs nanowires Nano Lett. 4 1961-4
    • (2004) Nano Lett. , vol.4 , pp. 1961-1964
    • Jensen, L.E.1
  • 11
    • 27944495968 scopus 로고    scopus 로고
    • Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays
    • Mohan P, Motohisa J and Fukui T 2005 Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays Nanotechnology 16 2903-7
    • (2005) Nanotechnology , vol.16 , pp. 2903-2907
    • Mohan, P.1    Motohisa, J.2    Fukui, T.3
  • 12
    • 18744404227 scopus 로고    scopus 로고
    • Arrays of vertically aligned and hexagonally arranged ZnO nanowires: A new template-directed approach
    • Fan H J, et al. 2005 Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach Nanotechnology 16 913
    • (2005) Nanotechnology , vol.16 , pp. 913
    • Fan, H.J.1
  • 13
    • 29844436610 scopus 로고    scopus 로고
    • Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography
    • Fan H J, et al. 2006 Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography J. Cryst. Growth 287 34-8
    • (2006) J. Cryst. Growth , vol.287 , pp. 34-38
    • Fan, H.J.1
  • 14
    • 2342530489 scopus 로고    scopus 로고
    • Nanowire arrays defined by nanoimprint lithography
    • Mrtensson T, et al. 2004 Nanowire arrays defined by nanoimprint lithography Nano Lett. 4 699-702
    • (2004) Nano Lett. , vol.4 , pp. 699-702
    • Mrtensson, T.1
  • 15
    • 34547423210 scopus 로고    scopus 로고
    • Epitaxial growth of indium arsenide nanowires on silicon using nucleation templates formed by self-assembled organic coatings
    • Martensson T, et al. 2007 Epitaxial growth of indium arsenide nanowires on silicon using nucleation templates formed by self-assembled organic coatings Adv. Mater. 19 1801
    • (2007) Adv. Mater. , vol.19 , pp. 1801
    • Martensson, T.1
  • 19
    • 0035155619 scopus 로고    scopus 로고
    • Guide to references on III-V semiconductor chemical etching
    • Clawson A R 2001 Guide to references on III-V semiconductor chemical etching Mater. Sci. Eng. R 31 1-438
    • (2001) Mater. Sci. Eng. R , vol.31 , pp. 1-438
    • Clawson, A.R.1
  • 21
    • 33744522164 scopus 로고    scopus 로고
    • Position-controlled epitaxial III-V nanowires on silicon
    • Roest A L, et al. 2006 Position-controlled epitaxial III-V nanowires on silicon Nanotechnology 17 S271
    • (2006) Nanotechnology , vol.17 , pp. 271
    • Roest, A.L.1
  • 22
    • 0141903281 scopus 로고    scopus 로고
    • Large-scale synthesis of arrays of high-aspect-ratio rigid vertically aligned carbon nanofibres
    • Melechko A V, et al. 2003 Large-scale synthesis of arrays of high-aspect-ratio rigid vertically aligned carbon nanofibres Nanotechnology 14 1029
    • (2003) Nanotechnology , vol.14 , pp. 1029
    • Melechko, A.V.1
  • 23
    • 0001757428 scopus 로고    scopus 로고
    • Patterned growth of individual and multiple vertically aligned carbon nanofibers
    • Merkulov V I, Lowndes D H, Wei Y Y, Eres G and Voelkl E 2000 Patterned growth of individual and multiple vertically aligned carbon nanofibers Appl. Phys. Lett. 76 3555-7
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 3555-3557
    • Merkulov, V.I.1    Lowndes, D.H.2    Wei, Y.Y.3    Eres, G.4    Voelkl, E.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.