I-V characteristics of co-planar metal-semiconductor-metal nanojunctions

EPJ Applied Physics

Volumn 3, Issue 1, 1998, Pages 21-28

  Rousset, V ^a   Joachim, C ^a   Ondarcuhu T ^a   Rousset, B ^b  

^a CEMES CNRS   (France)

^b LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; FABRICATION; NANOTECHNOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THERMAL EFFECTS; THIN FILMS;

NONLINEAR LOW VOLTAGE CHARACTERISTICS; PLANAR METAL SEMICONDUCTOR METAL NANOJUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0031635318     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1998199     Document Type: Article

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