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Thin Solid Films

Volumn 519, Issue 1, 2010, Pages 5-10

Power and pressure effects upon magnetron sputtered aluminum doped ZnO films properties

(6) Rahmane, S a,b Djouadi, M A b Aida, M S c Barreau, N b Abdallah, B b Hadj Zoubir, N d

a UNIVERSITY OF BISKRA (Algeria)

b UNIVERSITÉ DE NANTES (France)

c Universite Mentouri Constantine (Algeria)

d UNIVERSITY OF TIARET (Algeria)

Author keywords

Al doped zinc oxide; Magnetron sputtering; Transmission electron microscopy; X ray diffraction

Indexed keywords

ENERGY GAP; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; PRESSURE EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPARENT CONDUCTING OXIDES; X RAY DIFFRACTION; ZINC OXIDE;

AL-DOPED ZINC OXIDE; ARGON GAS PRESSURE; MAGNETRON-SPUTTERED ALUMINUM; OPTICAL AND ELECTRICAL PROPERTIES; POLYCRYSTALLINE ALUMINUM; SILICON SUBSTRATES; SPUTTERING DEPOSITION; SPUTTERING PARAMETERS;

ALUMINUM OXIDE;

EID: 77957706597 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.06.063 Document Type: Article

Times cited : (89)

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