Thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures

Journal of Applied Physics

Volumn 87, Issue 9 I, 2000, Pages 4189-4193

  Tada, Haruna ^a   Kumpel, Amy E ^a   Lathrop, Richard E ^a   Slanina, John B ^a   Nieva, Patricia ^b   Zavracky, Paul ^b   Miaoulis, Ioannis N ^a   Wong, Peter Y ^a  

^a TUFTS UNIVERSITY   (United States)

^b NORTHEASTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000119857     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373050     Document Type: Article

References (23)

1. A. M. Madni and L. A. Wan, Proceedings of the IEEE Aerospace Applications Conference, 1998, p. 421
2. E. Obermeier, Mater. Res. Soc. Symp. Proc. 444, 39 (1997).
3. T. Yi and C. J. Kim, Meas. Sci. Technol. 10, 706 (1999).
4. S. Johansson and J.-Å. Schweitz, J. Appl. Phys. 63, 4799 (1988).
5. P. T. Jones, G. C. Johnson, and R. T. Howe, Mater. Res. Soc. Symp. Proc. 518, 197 (1998).
6. H. Kahn, S. Stemmer, R. L. Mullen, M. A. Huff, and A. H. Heuer, Mater. Res. Soc. Symp. Proc. 403, 321 (1996).
7. H. Kahn, S. Stemmer, K. Nandakumar, A. H. Heuer, R. L. Mullen, R. Ballarini, and M. A. Huff, Proceedings of IEEE International Workshop on Micro-electro-mechanical Systems, New York, NY, Feb. 11-15, 1996, p. 343.
8. S. Lee, C. Cho, J. Kim, S. Park, S. Yi, J. Kim, and D. Dan Cho, Mater. Res. Soc. Symp. Proc. 518, 21 (1998).
9. H. Kahn, M. A. Huff, and A. H. Heuer, Mater. Res. Soc. Symp. Proc. 518, 33 (1998).
10. S. Jayaraman, R. L. Edwards, and K. J. Hemker, J. Mater. Res. 14, 688 (1999).
11. O. Tabata, K. Kawahata, S. Sugiyama, and I. Igarashi, Proceedings of the IEEE Workshop on Microelectromechanical Systems, New York, NY, Feb. 20-22, 1989, p. 152.
12. W. N. Sharpe, Jr., B. Yuan, and R. L. Edwards, Mater. Res. Soc. Symp. Proc. 518, 193 (1998).
13. S. Greek and F. Ericson, Mater. Res. Soc. Symp. Proc. 518, 51 (1998).
14. W. N. Sharpe, Jr., B. Yuan, and R. L. Edwards, J. Micromech. 6, 193 (1997).
15. W. N. Sharpe, Jr., S. Brown, G. C. Johnson, and W. Knauss, Mater. Res. Soc. Symp. Proc. 518, 57 (1998).
16. H. Tada, A. E. Kumpel, R. E. Lathrop, J. B. Slanina, P. Nieva, P. Zavracky, I. N. Miaoulis, and P. Y. Wong, J. Mater. Res. (submitted).
17. H. Tada, A. E. Kumpel, R. E. Lathrop, J. B. Slanina, P. Nieva, P. Zavracky, I. N. Miaoulis, and P. Y. Wong, Rev. Sci. Instrum. 71, 161 (2000).
18. P. H. Townsend and D. M. Barnett, J. Appl. Phys. 62, 4438 (1987).
19. T. P. Weihs, S. Hong, J. C. Bravman, and W. D. Nix, Mater. Res. Soc. Symp. Proc. 130, 87 (1989).
20. T. Soma and H. M. Kagaya, in Properties of Silicon (The Institution of Electrical Engineers, Inspec, London, 1988), pp. 33-36.
21. J. H. Zhao, T. Ryan, and P. S. Ho, J. Appl. Phys. 85, 6421 (1999).
22. G. W. McLellan and E. B. Shand, Glass Engineering Handbook, 3rd ed. (McGraw-Hill, New York, 1984), pp. 2-14-2-15.
23. F. Jansen, M. A. Machonkin, N. Palmieri, and D. Kuhman, J. Appl. Phys. 62, 4732 (1987).