A novel two step metallization of Ni/Cu for low concentrator c-Si solar cells

Solar Energy Materials and Solar Cells

Volumn 94, Issue 12, 2010, Pages 2094-2101

  Chaudhari, Vikrant A ^a   Solanki, Chetan S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

c Si solar cells; Electroplating; Low concentrator solar cells; Ni Cu metallization

Indexed keywords

ANNEALED WAFERS; ARC DEPOSITION; C-SI SOLAR CELL; CONCENTRATOR SOLAR CELLS; CONTACT RESISTIVITIES; CU LAYERS; DOUBLE LAYERS; ELECTROLESS BATH; ELECTROLESS DEPOSITION; IV CHARACTERISTICS; LOW CONCENTRATIONS; METAL GRID; METALLIZATIONS; NICKEL SILICIDE; NISI LAYERS; SCREEN-PRINTED SOLAR CELLS; SERIES RESISTANCES; SI WAFER; TRANSMISSION LINE MODELS;

CONCENTRATION (PROCESS); CYTOLOGY; ELECTROPLATING; METALLIZING; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON; SILICON SOLAR CELLS; SILICON WAFERS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SOLAR CELLS;

EID: 77957661678     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.06.032     Document Type: Article

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