Phosphorus-doped, silver-based pastes for self-doping ohmic contacts for crystalline silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 73, Issue 2, 2002, Pages 209-219

  Porter, L M ^a   Teicher, A ^a   Meier, D L ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b EBARA Solar Inc   (United States)

Author keywords

Crystalline silicon solar cells; Ohmic contacts; Silver based pastes

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); INTERFACES (MATERIALS); OHMIC CONTACTS; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DIODES; SUBSTRATES;

EUTECTIC TEMPERATURE;

SILICON SOLAR CELLS;

EID: 0036605148     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(01)00126-X     Document Type: Article

References (9)

1. Boron-doped back-surface fields using an aluminum-alloy process
2. Self-doping contacts and associated silicon solar cell structures
3. Self-doping contacts to silicon using silver coated with a dopant source
4. Models for ohmic contacts on graded crystalline or amorphous heterojunctions
5. A critical review of ohmic and rectifying contacts for silicon carbide
6. Effects of surface and interlayer processing conditions on selected ohmic contact metallizations for p-type silicon carbide