Self-assembled 275nm-gap electrodes for CMOS-MEMS resonators and its precision DC charge-based capacitance measurement

Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Volumn , Issue , 2008, Pages 240-243

  Lo, Chiung C ^a   Fedder, Gary K ^a,b  

^a Department of Electrical and Computer Engineering ^*  (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUATORS; CAPACITANCE; CAPACITANCE MEASUREMENT; CMOS INTEGRATED CIRCUITS; ELECTRODES; MICROELECTROMECHANICAL DEVICES; MICROSYSTEMS; RESONATORS;

CAPACITIVE COUPLINGS; CHARGE-BASED CAPACITANCE MEASUREMENTS; ELECTRODE GEOMETRIES; GAIN ENHANCEMENT; INPUT AND OUTPUTS; MEMS ELECTRODE; PARASITIC CAPACITANCE; TEMPERATURE STABILITY;

SOLID-STATE SENSORS;

EID: 77957605168     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31438/trf.hh2008.63     Document Type: Conference Paper

References (10)

1. W. T. Hsu, J. R. Clark, and C. T. C. Nguyen, "A sub-micron capacitive gap process for multiple-metal-electrode lateral micromechanical resonators," presented at The 14th IEEE International Conference on Micro Electro Mechanical Systems, Interlaken, Switzerland, 2001.
2. S. A. Bhave and R. T. Howe, "Silicon nitride-on-silicon bar resonator using internal electrostatic transduction," presented at The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, Seoul, Korea, 2005.
3. C.-C. Lo, C. Fang, and G. K. Fedder, "Integrated HF CMOS-MEMS square-frame resonators with on-chip electronics and electrothermal narrow gap mechanism," presented at The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, Seoul, Korea, 2005.
4. R. Bach, B. Davis, and R. Laubhan, "Improvements to CBCM (charge-based capacitance measurement) for deep submicron CMOS technology," presented at International Society for Quality Electronic Design, San Jose, CA, 2006.
5. J. C. Chen, B. W. McGaughy, D. Sylvester, and H. Chenming, "An on-chip, attofarad interconnect charge-based capacitance measurement (CBCM) technique," presented at International Electron Devices Meeting, San Francisco, CA, 1996.
6. D. Sylvester, J. C. Chen, and H. Chenming, "Investigation of interconnect capacitance characterization using charge-based capacitance measurement (CBCM) technique and three-dimensional simulation," IEEE Journal of Solid-State Circuits, vol. 33, pp. 449-453, 1998.
7. L. Vendrame, L. Bortesi, F. Cattane, and A. Bogliolo, "Crosstalk-based capacitance measurements: theory and applications," IEEE Transactions on Semiconductor Manufacturing, vol. 19, pp. 67-77, 2006.
8. Y.-W. Chang, C. Hsing-Wen, L. Tao-Cheng, K. Ya-Chin, T. Wenchi, K. Yen-Hui Joseph, and L. Chih-Yuan, "Charge-based capacitance measurement for bias-dependent capacitance," IEEE Electron Device Letters, vol. 27, pp. 390-392, 2006.
9. P. J. Gilgunn, J. Liu, N. Sarkar, and G. K. A. F. G. K. Fedder, "CMOS-MEMS Lateral Electrothermal Actuators," Journal of Microelectromechanical Systems, vol. 17, pp. 103-114, 2008.
10. G. K. Ho, K. Sundaresan, S. Pourkamali, and F. A. A. F. Ayazi, "Low-motional-impedance highly-tunable I/sup 2/ resonators for temperature-compensated reference oscillators," presented at The18th IEEE International Conference on Micro Electro Mechanical Systems, Maimi, FL, 2005.