Charge-based capacitance measurement for bias-dependent capacitance

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 390-392

  Chang, Yao Wen ^a,b   Chang, Hsing Wen ^a   Lu, Tao Cheng ^a   King, Ya Chin ^b   Ting, Wenchi ^a   Ku, Yen Hui Joseph ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Capacitance measurement; Charge based; Charge based capacitance measurement (CBCM); Effective channel length; MOSFET capacitor

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTOR DEVICE TESTING;

CHARGE-BASED CAPACITANCE MEASUREMENT; EFFECTIVE CHANNEL LENGHT; GATE CAPACITANCE;

CAPACITANCE MEASUREMENT;

EID: 33646236910     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873368     Document Type: Article

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