Two-step chemical mechanical polishing of sapphire substrate

Journal of the Electrochemical Society

Volumn 157, Issue 6, 2010, Pages

  Zhang, Zefang ^a,b,c   Liu, Weili ^a,c   Song, Zhitang ^a,c   Hu, Xiaokai ^a,c  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c Shanghai Xinanna Electronic Technology Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CMP MECHANISM; COEFFICIENT OF FRICTIONS; HIGH REMOVAL RATES; IN-SITU; MATERIAL REMOVAL RATE; NANO SCALE; OPTIMIZED PROCESS; PLANARIZATION TECHNOLOGY; POLISHED SURFACES; POLISHING PROCESSS; POLISHING TIME; RMS ROUGHNESS; ROOT MEAN SQUARE ROUGHNESS; SAPPHIRE SUBSTRATES; SILICA SLURRIES; SILICA-BASED SLURRIES; SINGLE-STEP; ULTRA SMOOTH SURFACE; ULTRAFINE;

CHEMICAL MECHANICAL POLISHING; NANOSTRUCTURED MATERIALS; POLISHING; SAPPHIRE; SILICA; SLURRIES; SUBSTRATES; SURFACE ROUGHNESS; SURFACES;

CHEMICAL POLISHING;

EID: 77957595583     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3410116     Document Type: Article

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