메뉴 건너뛰기




Volumn 65, Issue 1-2, 2002, Pages 13-23

Effect of mechanical process parameters on chemical mechanical polishing of Al thin films

Author keywords

Aluminum thin film; Chemical mechanical polishing; Mechanical process parameter

Indexed keywords

ABRASIVES; ALUMINA; CHEMICAL MECHANICAL POLISHING; SLURRIES; SURFACE ROUGHNESS;

EID: 0036891819     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00726-8     Document Type: Article
Times cited : (34)

References (14)
  • 2
    • 0030380160 scopus 로고    scopus 로고
    • Chemical-mechanical polishing: Enhancing the manufacturability of MEMS
    • Sniegowski J.J. Chemical-mechanical polishing: enhancing the manufacturability of MEMS. SPIE Proc. 2879:1996;104-115.
    • (1996) SPIE Proc. , vol.2879 , pp. 104-115
    • Sniegowski, J.J.1
  • 3
    • 0000103585 scopus 로고    scopus 로고
    • Planarization multilevel interconnection using chemical mechanical polishing of selective CVD-Al via plugs
    • Amazawa T., Yamamoto E., Arita Y. Planarization multilevel interconnection using chemical mechanical polishing of selective CVD-Al via plugs. IEEE Trans. Electron Device. 45:1998;815-820.
    • (1998) IEEE Trans. Electron Device , vol.45 , pp. 815-820
    • Amazawa, T.1    Yamamoto, E.2    Arita, Y.3
  • 4
    • 0032048538 scopus 로고    scopus 로고
    • Design and fabrication of micromirror array supported by vertical springs
    • Shin J.-W., Chung S.-W., Kim Y.-K., Choi B.K. Design and fabrication of micromirror array supported by vertical springs. Sensors Actuators A. 66:1998;144-149.
    • (1998) Sensors Actuators A , vol.66 , pp. 144-149
    • Shin, J.-W.1    Chung, S.-W.2    Kim, Y.-K.3    Choi, B.K.4
  • 7
    • 0032476325 scopus 로고    scopus 로고
    • Mechanical characteristics and chemical-mechanical polishing of aluminum alloy thin films
    • Wang Y.L., Wu J., Liu C.W., Wang T.C., Dun J. Mechanical characteristics and chemical-mechanical polishing of aluminum alloy thin films. Thin Solid Films. 332:1998;397-403.
    • (1998) Thin Solid Films , vol.332 , pp. 397-403
    • Wang, Y.L.1    Wu, J.2    Liu, C.W.3    Wang, T.C.4    Dun, J.5
  • 8
    • 0033726969 scopus 로고    scopus 로고
    • Microstructure-related resistivity change after chemical-mechanical polish of Al and W thin films
    • Tseng W.-T., Wang Y.-L., Niu J. Microstructure-related resistivity change after chemical-mechanical polish of Al and W thin films. Thin Solid Films. 370:2000;96-100.
    • (2000) Thin Solid Films , vol.370 , pp. 96-100
    • Tseng, W.-T.1    Wang, Y.-L.2    Niu, J.3
  • 9
    • 0032098513 scopus 로고    scopus 로고
    • An investigation of slurry chemistry used in chemical mechanical planarization of aluminum
    • Kallingal C.G., Duquette D.J., Murarka S.P. An investigation of slurry chemistry used in chemical mechanical planarization of aluminum. J. Electrochem. Soc. 145:1998;2074-2081.
    • (1998) J. Electrochem. Soc. , vol.145 , pp. 2074-2081
    • Kallingal, C.G.1    Duquette, D.J.2    Murarka, S.P.3
  • 12
    • 0033881916 scopus 로고    scopus 로고
    • Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry
    • Kuo H.-S., Tsai W.-T. Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid base slurry. J. Electrochem. Soc. 147:2000;149-154.
    • (2000) J. Electrochem. Soc. , vol.147 , pp. 149-154
    • Kuo, H.-S.1    Tsai, W.-T.2
  • 13
    • 0034205661 scopus 로고    scopus 로고
    • Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry
    • Kuo H.-S., Tsai W.-T. Effect of applied potential on the chemical mechanical polishing of aluminum in phosphoric acid base slurry. J. Electrochem. Soc. 147:2000;2136-2142.
    • (2000) J. Electrochem. Soc. , vol.147 , pp. 2136-2142
    • Kuo, H.-S.1    Tsai, W.-T.2
  • 14
    • 0035281722 scopus 로고    scopus 로고
    • Effect of alumina and hydrogen peroxide on the chemical-mechanical polishing of aluminum in phosphoric acid base slurry
    • Kuo H.-S., Tsai W.-T. Effect of alumina and hydrogen peroxide on the chemical-mechanical polishing of aluminum in phosphoric acid base slurry. Mater. Chem. Phys. 69:2001;53-61.
    • (2001) Mater. Chem. Phys. , vol.69 , pp. 53-61
    • Kuo, H.-S.1    Tsai, W.-T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.