Improved GaN-Based LED light extraction efficiencies via selective MOCVD using peripheral microhole arrays

IEEE Photonics Technology Letters

Volumn 20, Issue 15, 2008, Pages 1284-1286

  Kim, Hyung Gu ^a   Cuong, Tran Viet ^a   Na, Min Gyu ^a   Kim, Hyun Kyu ^a   Kim, Hee Yun ^a   Ryu, Jae Hyung ^a   Hong, Chang Hee ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Chemical vapor deposition; Gallium nitride; GaN; Light emitting diodes; Light emitting diode (LED); MOCVD; Photonics; Scanning electron microscopy; Selective metal organic chemical vapor deposition (MOCVD); Shape

Indexed keywords

ABERRATIONS; CURRENT DENSITY; DIODES; EXTRACTION; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; LIGHT; LIGHT EMISSION; LIGHT SOURCES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METAL RECOVERY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); PNEUMATIC CONTROL EQUIPMENT; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; VAPOR DEPOSITION; VAPORS;

GAN; LIGHT-EMITTING DIODE (LED); MOCVD; SELECTIVE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); SHAPE;

LIGHT EMITTING DIODES;

EID: 48349116869     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.926870     Document Type: Article

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