Strain-profile determination in ion-implanted single crystals using generalized simulated annealing

Journal of Applied Crystallography

Volumn 43, Issue 5 PART 1, 2010, Pages 1046-1052

  Boulle, Alexandre ^a   Debelle, Aurélien ^b  

^a UNIVERSITY OF LIMOGES   (France)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

ion implanted single crystals; simulated annealing; strain profiles

Indexed keywords

CURVE FITTING; ION IMPLANTATION; IONS; LATTICE THEORY; LEAST SQUARES APPROXIMATIONS; SIMULATED ANNEALING; X RAY DIFFRACTION; YTTRIA STABILIZED ZIRCONIA; YTTRIUM OXIDE; ZIRCONIA;

FITTING PROCEDURE; GENERALIZED SIMULATED ANNEALING; HIGH RESOLUTION X RAY DIFFRACTION; ION IMPLANTED; LEAST SQUARES FITTING; MODEL INDEPENDENT; STRAIN PROFILES; YTTRIA-STABILIZED ZIRCONIAS (YSZ);

SINGLE CRYSTALS;

EID: 77957367166     PISSN: 00218898     EISSN: 16005767     Source Type: Journal    
DOI: 10.1107/S0021889810030281     Document Type: Article

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