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Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

Microstructure of Cs-implanted zirconia: Role of temperature

(5) Vincent, L a Thom L a Garrido, F a Kaitasov, O a Houdelier, F b

a CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES (France)

b CEMES CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CESIUM; DISLOCATIONS (CRYSTALS); IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; SOLID SOLUTIONS; TRANSMISSION ELECTRON MICROSCOPY; YTTRIA STABILIZED ZIRCONIA; ZIRCONIA;

CUBIC ZIRCONIAS; DISLOCATION LOOPS; FLUENCE; FLUENCES; HIGH TEMPERATURES; IMPLANTATION TEMPERATURES; IN-SITU; ION CHANNELINGS; ION FLUENCE; POLYGONIZATION; POSTANNEALING; RADIATION DEFECTS; RECRYSTALLIZATION; ROOM TEMPERATURES; RUTHERFORD BACKSCATTERINGS; SATURATION VALUES; TEMPERATURE DEPENDENCES; THERMAL ANNEALING; ZIRCONATE;

CESIUM COMPOUNDS;

EID: 58149229071 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3021162 Document Type: Article

Times cited : (23)

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