Strain distribution due to ion implantation revealed by extremely asymmetric x-ray diffraction

e-Journal of Surface Science and Nanotechnology

Volumn 4, Issue , 2006, Pages 25-31

  Emoto, T ^a   Akimoto, K ^b   Ito, K ^b   Ghatak, J ^c   Satyam, P V ^c  

^a TOYOTA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c INSTITUTE OF PHYSICS   (India)

Author keywords

Ion implantation; Lattice strain; x ray diffraction

Indexed keywords

CRYSTAL ORIENTATION; GRAPHIC METHODS; ION IMPLANTATION; SILICON; STRUCTURAL ANALYSIS; X RAY DIFFRACTION;

DYNAMICAL DIFFRACTION THEORY; INTERSTITIALS; LATTICE STRAIN; STRAIN DISTRIBUTION;

STRAIN;

EID: 30744453249     PISSN: 13480391     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2006.25     Document Type: Conference Paper

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