The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

Solid State Communications

Volumn 150, Issue 41-42, 2010, Pages 1991-1994

  Song, H P ^a   Zheng, G L ^a   Yang, A L ^a   Guo, Y ^a   Wei, H Y ^a   Li, C M ^a   Yang, S Y ^a   Liu, X L ^a   Zhu, Q S ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A. In2O3; A. ZnO; B. MOCVD; E. Photoelectron spectroscopies

Indexed keywords

A. IN2O3; E. PHOTOELECTRON SPECTROSCOPIES; EPITAXIAL RELATIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; VALENCE BAND OFFSETS; VALENCE-BAND MAXIMUMS; WURTZITES; X RAY PHOTOEMISSION SPECTROSCOPY; ZNO; ZNO FILMS;

ELECTRON MOBILITY; EMISSION SPECTROSCOPY; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOELECTRICITY; PHOTONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

ZINC OXIDE;

EID: 77957254114     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.08.022     Document Type: Article

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