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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 2, 2005, Pages 249-252

Electrical switching behavior of bulk As-Te-Si glasses: Composition dependence and topological effects

(2) Anbarasu, M a Asokan, S a

a INDIAN INSTITUTE OF SCIENCE (India)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COMPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POTENTIAL; NEGATIVE RESISTANCE; SWITCHING;

CHEMICAL THRESHOLD (CT); COORDINATION NUMBER; RIGIDITY PERCOLATION THRESHOLD (RPT); SWITCHING VOLTAGE;

GLASS;

EID: 10644268513 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-3030-2 Document Type: Article

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.