Electrical and switching properties of amorphous films based on the Ge-Se-Tl system

Vacuum

Volumn 61, Issue 1, 2001, Pages 45-53

  Afifi, M A ^a   Abdel Aziz, M M ^a   Labib, H H ^a   Fadel, M ^a   El Metwally, E G ^a  

^a Ain Shams University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; GLASS TRANSITION; THERMAL EFFECTS; THIN FILMS;

COVALENT BOND DENSITY;

GERMANIUM COMPOUNDS;

EID: 0035313533     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00443-7     Document Type: Article

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