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Volumn 312, Issue 21, 2010, Pages 3131-3135

Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy

Author keywords

A1 Crystal structure; A1 Doping; B1 Nitrides; B2 Semiconducting gallium compounds

Indexed keywords

A-PLANE GAN; A1 CRYSTAL STRUCTURE; A1 DOPING; B1 NITRIDES; B2 SEMICONDUCTING GALLIUM COMPOUNDS; COMPENSATION EFFECTS; COMPENSATION RATIO; DEEP DONOR; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTY; GAN FILM; HALL EFFECT MEASUREMENT; METAL-ORGANIC VAPOR PHASE EPITAXY; MG-DOPED; MG-DOPING; PHOTOLUMINESCENCE SPECTRUM; VARIABLE TEMPERATURE;

EID: 77956879776     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.07.038     Document Type: Article
Times cited : (33)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.