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Volumn 312, Issue 21, 2010, Pages 3131-3135
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Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
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Author keywords
A1 Crystal structure; A1 Doping; B1 Nitrides; B2 Semiconducting gallium compounds
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Indexed keywords
A-PLANE GAN;
A1 CRYSTAL STRUCTURE;
A1 DOPING;
B1 NITRIDES;
B2 SEMICONDUCTING GALLIUM COMPOUNDS;
COMPENSATION EFFECTS;
COMPENSATION RATIO;
DEEP DONOR;
ELECTRICAL AND OPTICAL PROPERTIES;
ELECTRICAL PROPERTY;
GAN FILM;
HALL EFFECT MEASUREMENT;
METAL-ORGANIC VAPOR PHASE EPITAXY;
MG-DOPED;
MG-DOPING;
PHOTOLUMINESCENCE SPECTRUM;
VARIABLE TEMPERATURE;
CRYSTAL STRUCTURE;
ELECTRIC PROPERTIES;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
HALL EFFECT;
HOLE CONCENTRATION;
MAGNETIC FIELD EFFECTS;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SECONDARY BATTERIES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING GALLIUM COMPOUNDS;
VAPORS;
DOPING (ADDITIVES);
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EID: 77956879776
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.07.038 Document Type: Article |
Times cited : (33)
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References (20)
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