Control of p-type conduction in a-plane Ga1-xInxN (0 (5) Iida, Daisuke a Iwaya, Motoaki a Kamiyama, Satoshi a Amano, Hiroshi a Akasaki, Isamu a a MEIJO UNIVERSITY (Japan)

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4996-4998

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ACTIVATION ENERGY; CONCENTRATION (PROCESS); CORUNDUM; CRYSTAL GROWTH; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HOLE CONCENTRATION; MAGNESIUM PRINTING PLATES; NITRIDES; SAPPHIRE; SECONDARY BATTERIES; SEMICONDUCTING GALLIUM; SUBSTRATES; VAPORS;

A PLANES; A3. METALORGANIC VAPOR-PHASE EPITAXY; B1. GALLIUM COMPOUNDS; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; ELECTRICAL PROPERTIES; GAN TEMPLATES; METAL ORGANIC; MG ACCEPTORS; P-TYPE CONDUCTIONS; PLANE SAPPHIRES; ROOM TEMPERATURES;

VAPOR PHASE EPITAXY;

EID: 56249135540     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.005     Document Type: Article

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