The effects of Ta on the formation of Ni-silicide in Ni 0.95xTax0.05/Si systems

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 241-245

  Lee, Dongwon ^a   Do, Kihoon ^a   Ko, Dae Hong ^a   Choi, Siyoung ^b   Ku, Ja Hum ^b   Yang, Cheol Woong ^c  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Microstructure; Ni silicide; Thermal stability

Indexed keywords

AGGLOMERATION; ANNEALING; MICROSTRUCTURE; PHASE TRANSITIONS; TANTALUM; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING LAYERS; NI SILICIDE; PARASITIC RESISTANCE; SHEET RESISTANCE;

NICKEL COMPOUNDS;

EID: 10644241666     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.081     Document Type: Conference Paper

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