Charge modulated reflectance topography for probing in-plane carrier distribution in pentacene field-effect transistors

Applied Physics Letters

Volumn 97, Issue 11, 2010, Pages

  Manaka, Takaaki ^a   Kawashima, Satoshi ^a   Iwamoto, Mitsumasa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATED CHARGE; BIAS CONDITIONS; CARRIER DENSITY; CARRIER DISTRIBUTIONS; DEVICE OPERATIONS; ELECTRON POPULATION; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE INJECTION; IN-PLANE; MODEL-BASED; PENTACENES;

MESFET DEVICES; MOLECULAR ORBITALS; REFLECTION;

FIELD EFFECT TRANSISTORS;

EID: 77956837147     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3490716     Document Type: Article

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