Probing of channel region in pentacene field effect transistors by optical second harmonic generation

Chemical Physics Letters

Volumn 477, Issue 1-3, 2009, Pages 221-224

  Lim, Eunju ^a   Yamada, Daisuke ^a   Weis, Martin ^a   Manaka, Takaaki ^a   Iwamoto, Mitsumasa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BIASING CONDITIONS; CHANNEL REGION; CHARGE ACCUMULATION; GATE INSULATOR; OPTICAL SECOND HARMONIC GENERATION; PENTACENE FIELD EFFECT TRANSISTORS;

ELECTRIC FIELDS; HARMONIC GENERATION; NONLINEAR OPTICS; SEMICONDUCTING ORGANIC COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 67650745928     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2009.06.068     Document Type: Article

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